Title :
Control of initial layer for low temperature and high deposition rate polycrystalline silicon film formation process
Author :
Murata, K. ; Ito, Minora ; Hori, M. ; Goto, T.
Author_Institution :
Dept. of Quantum Eng., Nagoya Univ., Japan
Abstract :
In this study, the two step growth (TSG) method has been demonstrated to satisfy thin interface layer, the high crystallinity and high deposition rate of poly-Si film, at the same time. In the TSG, firstly the seed layer was formed without charged species, that is, with neutral species. Then, the poly-Si film was subsequently grown on the seed layer with charged species. The effects of ion bombardment on the nucleation of poly-Si films at the initial growth stage are intensively discussed.
Keywords :
elemental semiconductors; nucleation; plasma CVD; semiconductor growth; semiconductor thin films; silicon; Si; charged species; crystallinity; interface layer; ion bombardment; low temperature deposition; nucleation; plasma-enhanced CVD; polycrystalline silicon film; seed layer; two step growth; Atomic force microscopy; Crystallization; Plasma temperature; Rough surfaces; Semiconductor films; Silicon; Substrates; Surface morphology; Surface roughness; Temperature control;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
DOI :
10.1109/IMNC.1999.797552
