DocumentCode :
3222588
Title :
Novel alignment method for planarized substrates in electron beam lithography
Author :
Yamamoto, J. ; Moniwa, A. ; Mura, Florian ; Terasawa, T.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
fYear :
1999
fDate :
6-8 July 1999
Firstpage :
222
Lastpage :
223
Abstract :
Improvement of an alignment accuracy is one of the key issues for achieving large scale integration. Recently, wafer planarization technique has been introduced to realize multilevel metalization with high reliability. However, it causes difficulty in obtaining high alignment accuracy because the alignment mark depth becomes small. In this paper, we propose a new alignment mark structure for planarized substrates to obtain high alignment accuracy in electron beam lithography. For multilevel metalization processes, advantages of buried heavy metal mark were confirmed by detection signal simulation and exposure experiments. Light elements such as Si in SiO/sub 2/ layer or SiO/sub 2/ mark in Si substrate, especially periodic deep line marks that are suitable for wafer planarization processes, are also found to be novel alignment mark structure.
Keywords :
electron beam lithography; alignment method; buried heavy metal mark; electron beam lithography; high reliability; large scale integration; multilevel metalization; periodic deep line marks; planarized substrates; wafer planarization technique; Acceleration; Contamination; Electron beams; Laboratories; Large scale integration; Lithography; Periodic structures; Planarization; Signal detection; Signal processing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
Type :
conf
DOI :
10.1109/IMNC.1999.797557
Filename :
797557
Link To Document :
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