Accurate modeling for CMOS inverter overshooting time in nanoscale paradigm

Author

Al-Taradeh, Nedal R. ; Rjoub, Abdoul ; Al-Mistarihi, Mamoun F.

Author_Institution

Electr. Eng. Dept., Jordan Univ. of Sci. & Technol., Irbid, Jordan

fYear

2013

fDate

15-18 Dec. 2013

Firstpage

1

Lastpage

4

Abstract

In this paper, a new accurate and low delay leakage current (I_L) model for complementary metal oxide semiconductor (CMOS) inverter is presented. During the overshooting period, the input-to-output coupling capacitance (C_M) influence has been modeled regarding the short channel effect (SCE). Polynomial approximation is used to simplify and accelerate the model with very good accuracy. The time conditions for overshooting region (t_ov) are also derived regarding leakage current and coupling capacitance influence. Performance evaluation of the proposed model is compared with simulated results of the BSIM4 level 54 model using HSPICE with very good agreement.

Keywords

CMOS logic circuits; integrated circuit modelling; logic gates; polynomial approximation; BSIM4 level 54 model; CMOS inverter overshooting time; HSPICE; SCE; complementary metal oxide semiconductor inverter; coupling capacitance influence; input-to-output coupling capacitance influence; leakage current; low-delay leakage current model; nanoscale paradigm; overshooting period; overshooting region time condition; polynomial approximation; short-channel effect; Acceleration; Analytical models; MOS devices; Semiconductor device modeling; Complementary metal oxide semiconductor (CMOS); coupling capacitance (CM); leakage current (IL); overshooting time conditions (tov); short channel effect (SCE);

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics (ICM), 2013 25th International Conference on

Conference_Location

Beirut

Print_ISBN

978-1-4799-3569-7

Type

conf

DOI

10.1109/ICM.2013.6735010

Filename

6735010