DocumentCode :
3222639
Title :
Design concepts of single-layer-resists for VUV lithography
Author :
Kishimura, Shinji ; Katsuyama, Akiko ; Sasago, Masaru ; Shirai, Masamitsu ; Tsunooka, Masahiro
Author_Institution :
ULSI Process Technol. Dev. Center, Matsushita Electron. Corp., Kyoto, Japan
fYear :
1999
fDate :
6-8 July 1999
Firstpage :
226
Lastpage :
227
Abstract :
We have studied the design of single-layer-resists for VUV lithography. From the point of view of transparency, phenol resins may be used as well as methacrylate polymers in VUV lithography. The resulting high contrast is thought due to the effect of direct photodecomposition of base polymer and photo-deprotection in addition to the deprotection by acids. We are planning to investigate the polymers with higher transparency (ex. halogen-substituted phenol resins) and the polymer structure inhibiting the crosslinking.
Keywords :
photoresists; ultraviolet lithography; VUV lithography; deprotection; methacrylate polymer; phenol resin; photodecomposition; polymer film; single-layer-resist; transparency; Absorption; Chemical technology; Electronic mail; Lamps; Lithography; Polymers; Resins; Resists; Ultra large scale integration; Wavelength measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International
Conference_Location :
Yokohama, Japan
Print_ISBN :
4-930813-97-2
Type :
conf
DOI :
10.1109/IMNC.1999.797559
Filename :
797559
Link To Document :
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