Title :
Hysteresis tunable FGMOS comparator
Author :
Nandhasri, Krissanapong ; Ngarmnil, Jitkasame
Author_Institution :
Dept. of Electron. Eng., Mahanakorn Univ. of Technol., Bangkok, Thailand
Abstract :
A novel hysteresis tunable voltage comparator is presented. The circuit is basically a simple voltage comparator embedded with a positive feedback scheme to create the hysteresis. In this work, two floating-gate MOSFETs (FGMOS), are employed to perform the feedback where one of the control gate voltages is used to tune an amount of the feedback current for the input devices. As a result, VTRP+ and VTRP- of the comparator can be tuned electronically. The proposed idea is implementable on standard double-poly CMOS processes. Since the design is normally incorporated with the FGMOS layout in order to get the value of the gate capacitances effectively, Magic Program is used to create the layouts on the AMI 1.2 μm CMOS process available through MOSIS. Simulation results from HSPICE are given to demonstrate the functionality
Keywords :
CMOS integrated circuits; MOSFET; SPICE; capacitance; circuit feedback; circuit layout CAD; circuit simulation; circuit tuning; comparators (circuits); dielectric hysteresis; integrated circuit layout; integrated circuit modelling; 1.2 micron; AMI CMOS process; FGMOS layout; HSPICE simulation; MOSIS; Magic Program; control gate voltage; control gate voltages; double-poly CMOS processes; electronic tuning; embedded voltage comparator; feedback; feedback current tuning; floating-gate MOSFETs; gate capacitance; hysteresis; hysteresis tunable FGMOS comparator; hysteresis tunable voltage comparator; input devices; positive feedback scheme; voltage comparator; CMOS process; Capacitance; Capacitors; Circuit simulation; Electronic mail; Equations; Hysteresis; MOSFET circuits; Tunable circuits and devices; Voltage control;
Conference_Titel :
Semiconductor Electronics, 2000. Proceedings. ICSE 2000. IEEE International Conference on
Conference_Location :
Guoman Port Dickson Resort
Print_ISBN :
0-7803-6430-9
DOI :
10.1109/SMELEC.2000.932458