Application of zirconium silicon oxide films to an attenuated phase-shifting mask in ArF lithography

Author

Matsuo, Takahiro ; Onodera, Toshio ; Nakazawa, Keisuke ; Ogawa, Tohru ; Morimoto, Hiroaki ; Haraguchi, Takashi ; Fukuhara, Nobuhiko ; Matsuo, Tadashi ; Otaki, Masao ; Takeuchi, Susumu

Author_Institution

Semicond. Leading Edge Technol. Inc., Kanagawa, Japan

fYear

1999

fDate

6-8 July 1999

Firstpage

228

Lastpage

229

Abstract

The application of an attenuated phase-shifting mask (Att-PSM) to ArF excimer laser lithography is very promising in the pattern fabrication below 0.13 /spl mu/m. Zirconium silicon oxide (ZrSiO) film has been proposed as the phase shifter material for Att-PSM. The bi-layer ZrSiO film is composed of the absorptive film (AF) with a low oxygen concentration and the transmissive film (TF) with a high oxygen concentration to control the transmittance and the phase shift respectively. We must overcome the durability of the shifter material to an ArF excimer laser irradiation for practical use. In this paper, we present the ArF irradiation durability of ZrSiO films and the lithographic performance by applying it to Att-PSM in ArF lithography.

Keywords

phase shifting masks; silicon compounds; ultraviolet lithography; zirconium compounds; 0.13 micron; ArF; ArF lithography; ZrSiO; absorptive film; attenuated phase shifting mask; excimer laser irradiation; oxygen concentration; pattern fabrication; transmissive film; transmittance; zirconium silicon oxide bilayer film; Chemical lasers; Etching; Lead compounds; Lithography; Optical materials; Printing; Semiconductor films; Semiconductor lasers; Silicon; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International

Conference_Location

Yokohama, Japan

Print_ISBN

4-930813-97-2

Type

conf

DOI

10.1109/IMNC.1999.797560

Filename

797560