Title :
The saturation effect of etch depth at high RF power in CF4 plasma RIE silicon etching
Author :
Ehsan, Abang Annuar ; Shaari, Sahbudin ; Majlis, Burhanuddin Yeop
Author_Institution :
Fac. of Eng., Kebangsaan Univ., Bangi, Malaysia
Abstract :
The work presented here shows the effects of RF power of an RIE system on silicon etching. A p-type silicon (100) wafer is etched under four RF power levels, which are 40, 60, 80 and 100 W. The etch depth plotted shows a linear increase with RF power for a fixed etch time at low RF power. However, the etch depth shows a tendency to saturate at a higher RF power level. The behaviour is believed to be caused by the existence of a sheath layer when plasma is generated in the process chamber
Keywords :
elemental semiconductors; integrated circuit technology; organic compounds; plasma materials processing; plasma radiofrequency heating; plasma sheaths; silicon; sputter etching; 100 W; 40 W; 60 W; 80 W; RF power; RF power levels; RIE system RF power; Si; etch depth; etch depth saturation; etch time; p-type silicon (100) wafer; plasma generation; process chamber; saturation effect; sheath layer; silicon etching; tetrafluoromethane plasma RIE; Electrons; Etching; Plasma applications; Plasma chemistry; Plasma devices; Plasma properties; Plasma sheaths; Radio frequency; Resists; Silicon;
Conference_Titel :
Semiconductor Electronics, 2000. Proceedings. ICSE 2000. IEEE International Conference on
Conference_Location :
Guoman Port Dickson Resort
Print_ISBN :
0-7803-6430-9
DOI :
10.1109/SMELEC.2000.932468
