Title :
A fully Coupled Compact Self-Heating Model for a Thin SOI LIGBT with Packaging
Author :
Gamage, S. ; Udrea, F. ; Ali, Z. ; Pathirana, V.
Author_Institution :
Electr. Eng. Div., Cambridge Univ.
Abstract :
The silicon on insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is a popular choice in smart integrated circuit (IC) applications. An isothermal model valid for both thin and thick SOI LIGBTs was recently reported by us. In this paper, the authors formulate the well known thin silicon thermal conductivity reduction to the device model and extend it to include the package thermal behaviour. In the process the thermally important layers of the packaging and their impact on the device, both on electrical and thermal behaviours are identified. The resulting compact, physics based, scalable, fully coupled self-heating model is verified through numerical simulations and experimental data
Keywords :
insulated gate bipolar transistors; power integrated circuits; silicon-on-insulator; thermal conductivity; lateral insulated gate bipolar transistor; package thermal behaviour; power integrated circuits; self-heating; silicon-on-insulator; thermal conductivity reduction; Application specific integrated circuits; Bipolar integrated circuits; Coupling circuits; Insulated gate bipolar transistors; Integrated circuit packaging; Isothermal processes; Numerical simulation; Physics; Silicon on insulator technology; Thermal conductivity;
Conference_Titel :
Electronics Systemintegration Technology Conference, 2006. 1st
Conference_Location :
Dresden
Print_ISBN :
1-4244-0552-1
Electronic_ISBN :
1-4244-0553-x
DOI :
10.1109/ESTC.2006.280146