Title :
Effect of Zr doping on the semiconducting properties of La0.67 Ca0.33MnO3 ceramics
Author :
Halim, S.A. ; Koh, S.F. ; Chow, S.P. ; Zainuddin, H. ; Lim, K.P. ; Yu, O.S. ; Kabashi, K.K.
Author_Institution :
Dept. of Phys., Putra Malaysia Univ., Serdang, Malaysia
Abstract :
The transport properties of La0.67Ca0.33Mn 1-xZrxO3 ceramics exhibit the transition of semiconducting to metallic conductivity at TP and the magnetic properties observed in the χ-temperature curves show transition from paramagnetic to ferromagnetic at TC. The coexistence of TC and TP are due to the double exchange interaction of two electrons in Mn3+-O2--Mn4+ and Mn4+-O2--Mn3+ configuration which brings the system below TC into a metallic state. Hence it is observed that the Curie temperature TC is closely related to the sharp decrease in the electrical resistivity of the samples. However, both transition temperatures shift to lower temperatures as zirconium doping increases, indicating the loss of ferromagnetic order and transport properties. As for the transport properties, the semiconductor model ln(σ)~(Ea/kT) was used to explain the conduction mechanism of perovskite manganites above TP. It was concluded that the total conductivity, σtot, consists of the intrinsic and the extrinsic components, such that σtot=σint+σext. The activation energy increases initially from 0.056 eV to a maximum value of 0.082 eV at x=0.01 and decreases to 0.022 eV at a composition of x=0.20 for the extrinsic region
Keywords :
Curie temperature; calcium compounds; ceramics; doping profiles; electrical resistivity; exchange interactions (electron); ferromagnetic materials; ferromagnetic-paramagnetic transitions; lanthanum compounds; metal-insulator transition; narrow band gap semiconductors; zirconium; 0.022 eV; 0.056 to 0.082 eV; Curie temperature; La0.67Ca0.33Mn1-xZrxO 3 ceramics; La0.67Ca0.33MnO3 ceramics; La0.67Ca0.33MnO3:Zr; Zr doping effects; activation energy; conduction mechanism; electrical resistivity; electron double exchange interaction; extrinsic conductivity; ferromagnetic order; intrinsic conductivity; magnetic properties; metallic state; paramagnetic to ferromagnetic transition; perovskite manganites; semiconducting properties; semiconducting to metallic conductivity transition; semiconductor model; susceptibility-temperature curves; total conductivity; transition temperature shift; transport properties; zirconium doping; Ceramics; Conductivity; Electrons; Elementary particle exchange interactions; Magnetic properties; Paramagnetic materials; Semiconductivity; Semiconductor device doping; Temperature; Zirconium;
Conference_Titel :
Semiconductor Electronics, 2000. Proceedings. ICSE 2000. IEEE International Conference on
Conference_Location :
Guoman Port Dickson Resort
Print_ISBN :
0-7803-6430-9
DOI :
10.1109/SMELEC.2000.932474