Title :
Monolithic integration of an X-band circulator with GaAs MMICs
Author :
Adam, John D. ; Buhay, H. ; Daniel, M.R. ; Driver, M.C. ; Eldridge, G.W. ; Hanes, M.H. ; Messham, R.L.
Author_Institution :
Sci. & Technol. Center, Westinghouse Electr. Corp., Pittsburgh, PA, USA
Abstract :
Monolithic integration of circulators with GaAs MMICs offers the potential of lower cost, reduced size and improved uniformity over the present hybrid approaches. Development of MMIC compatible ferrite film deposition techniques, device design and fabrication are described. Results on ferrite film circulators deposited on Si and GaAs substrates are presented and integration with FETs discussed.<>
Keywords :
III-V semiconductors; MMIC power amplifiers; ferrite circulators; field effect MMIC; gallium arsenide; integrated circuit design; microwave circulators; FET MMICs; GaAs; MMIC compatible ferrite film deposition; MMICs; X-band circulator; device design; device fabrication; ferrite film circulators; uniformity; Costs; Dielectric losses; Dielectric substrates; Fabrication; Ferrites; Gallium arsenide; Insertion loss; MMICs; Monolithic integrated circuits; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406089
