Defects detecting method of copper interconnects based on signal reflection theory

Author

Zhou, Wen ; Liu, Hongxia ; Wei, Jianjun ; Kuang, Qianwei

Author_Institution

Sch. of Microelectron., Xidian Univ., Xi´´an, China

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

194

Lastpage

196

Abstract

Based on the signal reflection theory, this paper investigates the diction method of loss object defects in copper interconnects. The signal is reflected at the edge of impedance discontinuity, which is caused by the defects in interconnects. The reflection results of defects with different size and with different signal rise time are investigated. The results show that signal reflection caused by the defects is very obvious for the defect of 1 Â¿m length and signal rise time of 0.01 ps. The defects can be detected easily in this case. The reasons of rapid rise time of signal are analyzed at the end of this paper.

Keywords

copper; integrated circuit interconnections; copper interconnects; defects detecting method; diction method; loss object defects; signal reflection theory; size 1 mum; time 0.01 ps; Copper; Delay effects; Distributed parameter circuits; Impedance; Integrated circuit interconnections; Integrated circuit reliability; Object detection; Reflection; Transmission lines; Voltage; copper interconnections; defect detecting method; loss object defects; signal reflection;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394156

Filename

5394156