DocumentCode :
3223523
Title :
Research on thermal effect of Hall element driven by pulsed power supply
Author :
Chen, Xuelei
Author_Institution :
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
fYear :
2011
fDate :
27-29 May 2011
Firstpage :
433
Lastpage :
436
Abstract :
According to the characteristics of rapid response and low sensitivity of the Hall element, combined with the data processing methods of sample/hold and AD conversion widely used in engineering applications at present, it is explored to drive the Hall element by pulsed power supply, and increase the magnetic sensitivity of Hall element by sampling at the peak voltage. The conditions about the temperature rise of the Hall element driven by pulsed power supply are theoretically analyzed. The equivalent relationship of temperature rise between pulsed and DC power supply is put forward. It is pointed out that the peak power and peak voltage can be converted into equivalent power and equivalent voltage to reflect the temperature rise of the Hall element. The experimental results verify the equivalent relationship of the temperature rise.
Keywords :
Hall effect; magnetic sensors; pulsed power supplies; sample and hold circuits; AD conversion; Hall element; data processing methods; low sensitivity; magnetic sensitivity; peak power; peak voltage; pulsed power supply; rapid response; sample/hold; thermal effect; Heating; Hall element; pulse; thermal effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communication Software and Networks (ICCSN), 2011 IEEE 3rd International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-61284-485-5
Type :
conf
DOI :
10.1109/ICCSN.2011.6013866
Filename :
6013866
Link To Document :
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