• DocumentCode
    3223523
  • Title

    Research on thermal effect of Hall element driven by pulsed power supply

  • Author

    Chen, Xuelei

  • Author_Institution
    Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
  • fYear
    2011
  • fDate
    27-29 May 2011
  • Firstpage
    433
  • Lastpage
    436
  • Abstract
    According to the characteristics of rapid response and low sensitivity of the Hall element, combined with the data processing methods of sample/hold and AD conversion widely used in engineering applications at present, it is explored to drive the Hall element by pulsed power supply, and increase the magnetic sensitivity of Hall element by sampling at the peak voltage. The conditions about the temperature rise of the Hall element driven by pulsed power supply are theoretically analyzed. The equivalent relationship of temperature rise between pulsed and DC power supply is put forward. It is pointed out that the peak power and peak voltage can be converted into equivalent power and equivalent voltage to reflect the temperature rise of the Hall element. The experimental results verify the equivalent relationship of the temperature rise.
  • Keywords
    Hall effect; magnetic sensors; pulsed power supplies; sample and hold circuits; AD conversion; Hall element; data processing methods; low sensitivity; magnetic sensitivity; peak power; peak voltage; pulsed power supply; rapid response; sample/hold; thermal effect; Heating; Hall element; pulse; thermal effect;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Communication Software and Networks (ICCSN), 2011 IEEE 3rd International Conference on
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-61284-485-5
  • Type

    conf

  • DOI
    10.1109/ICCSN.2011.6013866
  • Filename
    6013866