DocumentCode
3223523
Title
Research on thermal effect of Hall element driven by pulsed power supply
Author
Chen, Xuelei
Author_Institution
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
fYear
2011
fDate
27-29 May 2011
Firstpage
433
Lastpage
436
Abstract
According to the characteristics of rapid response and low sensitivity of the Hall element, combined with the data processing methods of sample/hold and AD conversion widely used in engineering applications at present, it is explored to drive the Hall element by pulsed power supply, and increase the magnetic sensitivity of Hall element by sampling at the peak voltage. The conditions about the temperature rise of the Hall element driven by pulsed power supply are theoretically analyzed. The equivalent relationship of temperature rise between pulsed and DC power supply is put forward. It is pointed out that the peak power and peak voltage can be converted into equivalent power and equivalent voltage to reflect the temperature rise of the Hall element. The experimental results verify the equivalent relationship of the temperature rise.
Keywords
Hall effect; magnetic sensors; pulsed power supplies; sample and hold circuits; AD conversion; Hall element; data processing methods; low sensitivity; magnetic sensitivity; peak power; peak voltage; pulsed power supply; rapid response; sample/hold; thermal effect; Heating; Hall element; pulse; thermal effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Communication Software and Networks (ICCSN), 2011 IEEE 3rd International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-61284-485-5
Type
conf
DOI
10.1109/ICCSN.2011.6013866
Filename
6013866
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