Title :
DLTS investigation of acceptor states in P3MeT Schottky barrier diodes
Author :
Jones, G.W. ; Taylor, D.M. ; Gomes, H.L.
Author_Institution :
Sch. of Electron. Eng. & Comput. Syst., Wales Univ., Bangor, UK
Abstract :
Deep Level Transient Spectroscopy (DLTS) has been used to investigate hole traps in the depletion region of Schottky barrier diodes formed from electropolymerised poly(3-methylthiophene). The capacitance transients appear to be composed of a fast and a slow component. Analysis of the slower component using the “rate window” technique yields isochronal differential capacitance curves that depend on temperature in the manner predicted by theory
Keywords :
Schottky diodes; DLTS; Deep Level Transient Spectroscopy; P3MeT Schottky barrier diodes; Schottky barrier diodes; capacitance transients; depletion region; electropolymerised poly(3-methylthiophene); hole traps; isochronal differential capacitance curves; rate window;
Conference_Titel :
Conducting Polymers and Their Applications in Transducers and Instrumentation (Digest No: 1996/242), IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19961295
