Title : 
Field emission of ZnO cathode fabricated by electrophoresis
         
        
            Author : 
Yang, Yanning ; Zhang, Zhiyong ; Zhang, Fuchun ; Zhang, Weihu ; Yan, Junfeng
         
        
            Author_Institution : 
Inst. of Photonics & Photo-Technol., Northwest Univ., Xi´´an, China
         
        
        
        
        
        
            Abstract : 
As chrysanthemum-like ZnO particles are synthesized through hydrothermal route, ZnO nano-particles can be deposited on titanium substrates by electrophoresis. After 800°C heat treatment, testing of field electron emission is performed, it turns out that in the low-voltage, the chrysanthemum-like nano-ZnO has good field emission properties: the electric field threshold is 1.48V /¿m, electrical field strength reaches 4.5V /¿m, the field emission current is 100¿A; but in the high-voltage, field emission current is volatile. In the measurement, a serious damage on the sample surface may be due to poor bonding between ZnO and titanium substrate. Several interpretations are given about current fluctuations of high-voltage field emission. With the simple electrophoresis process and possible preparation of a large area, study of Chrysanthemum-like ZnO field emission lays the foundation for the practical application of field emission display devices in the future.
         
        
            Keywords : 
II-VI semiconductors; cathodes; electron emission; electrophoresis; titanium; zinc compounds; Ti; ZnO; cathode; current 100 muA; current fluctuations; electrophoresis; emission properties; field electron emission; high-voltage field emission; hydrothermal route; temperature 800 degC; Bonding; Cathodes; Electrokinetics; Electron emission; Heat treatment; Performance evaluation; Resistance heating; Testing; Titanium; Zinc oxide; electrophoresis; field emission Chrysanthemum -like Nano-ZnO; hydrothermal Synthesis;
         
        
        
        
            Conference_Titel : 
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
         
        
            Conference_Location : 
Xi´an
         
        
            Print_ISBN : 
978-1-4244-4297-3
         
        
            Electronic_ISBN : 
978-1-4244-4298-0
         
        
        
            DOI : 
10.1109/EDSSC.2009.5394167