A two-dimensional analytical subthreshold behavior model for short-channel dual-material gate (DMG) AlGaAs/GaAs HFETs

Author

Chiang, T.K.

Author_Institution

Dept. of Electr. Eng., Nat. Univ. of Kaohsiung, Kaohsiung, Taiwan

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

144

Lastpage

149

Abstract

Based on the exact solution of the two-dimensional Poisson´s equation, a new analytical model for the subthreshold behavior of a short-channel dual-material gate(DMG) AlGaAs/GaAs HFET´s is developed. The model illustrates how the device parameters affect the subthreshold characteristics. Both thin doped AlGaAs body and thin intrinsic AlGaAs spacer can greatly suppress the SCEs and reduce the degradation of threshold voltage and subthreshold swing. Besides, by either tuning a larger ratio of control gate to screen gate length or adjusting work function of the screen gate to a higher value, the DMG structure can lessen the drain-induced barrier lowering(DIBL) and degrade the subthreshold behavior. The model is verified by its good agreement with the numerical simulation of the device simulator.

Keywords

Poisson equation; aluminium compounds; gallium compounds; high electron mobility transistors; AlGaAs-GaAs; drain-induced barrier lowering; short-channel dual-material gate HFET; two-dimensional Poisson equation; Analytical models; Degradation; Gallium arsenide; HEMTs; Leakage current; MODFETs; Numerical simulation; Poisson equations; Threshold voltage; Turning;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394168

Filename

5394168