Title :
RF-DC power conversion of Schottky diode fabricated on AlGaAs/GaAs heterostructure for on-chip rectenna device application in nanosystem
Author :
Mustafa, Farahiyah ; Parimon, Norfarariyanti ; Rahman, S.F.A. ; Hashim, Ahmad Mustafa ; Osman, Mohd Nizam
Author_Institution :
Mater. Innovations & Nanoelectron. Res. group, Univ. Teknol. Malaysia, Skudai, Malaysia
Abstract :
The Schottky diodes enjoined with coplanar waveguides are investigated for applications in on-chip rectenna device application without insertion of a matching circuit. The design, fabrication, DC characteristics and RF-to-DC conversion of the AlGaAs/GaAs HEMT Schottky diode is presented. The RF signals are well converted by the fabricated Schottky diodes with cut-off frequency up to 20 GHz estimated in direct injection experiments. The outcomes of these results provide conduit for breakthrough designs for ultra-low power on-chip rectenna device technology to be integrated in nanosystems.
Keywords :
HEMT integrated circuits; III-V semiconductors; Schottky diodes; aluminium compounds; coplanar waveguides; dipole antennas; field effect MMIC; gallium arsenide; high electron mobility transistors; low-power electronics; nanoelectronics; power convertors; rectennas; AlGaAs-GaAs; RF-DC power conversion; coplanar waveguides; heterostructure HEMT Schottky diode; nanosystem; planar dipole antenna; ultralow power on-chip rectenna device; Circuits; Coplanar waveguides; Fabrication; Frequency estimation; Gallium arsenide; HEMTs; Nanoscale devices; Power conversion; Rectennas; Schottky diodes; AlGaAs/GaAs; HEMT; Rectenna; Schottky diode; coplanar waveguide; nanosystem;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394169
