Title :
Transport properties of an (8, 0) carbon/silicon carbide nanotube heterojunction
Author :
Liu, Hongxia ; Zhang, Heming ; Song, Jiuxu
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´´an, China
Abstract :
Nanotube heterojunction has a good application prospect in nanoelectronic devices. The transport properties of the heterojunction are the foundation of its simulation and design. In this paper, the transport properties of an (8, 0) carbon/silicon carbide nanotube heterojunction were investigated and negative differential resistance (NDR) property was discovered. The origin of the NDR is the fluctuation of the transmission coefficient caused by the variation of the applied bias voltage.
Keywords :
carbon nanotubes; nanoelectronics; silicon compounds; wide band gap semiconductors; SiC; nanoelectronic devices; nanotube heterojunction; negative differential resistance; transport properties; Atomic layer deposition; Carbon nanotubes; Electrodes; Gold; Green´s function methods; Heterojunctions; Nanoscale devices; Nanostructured materials; Scattering; Silicon carbide; nanotube hetero -junction; nonequilibrium Green´s functions; transport properties;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394170
