DocumentCode
3223713
Title
The influence of I-region width modulation on PIN diode attenuator design
Author
Caverly, Robert H. ; Zhi Wen Tang
Author_Institution
Dept. of Electr. & Comput. Eng., Massachusetts Univ., Dartmouth, MA, USA
fYear
1995
fDate
16-20 May 1995
Firstpage
87
Abstract
This paper discusses the effects of I-region width modulation on PIN diode attenuator performance. The work shows that the I-region thickness becomes thinner as the dc bias current decreases, and that overestimates of PIN diode forward resistance can be the result.<>
Keywords
microwave circuits; p-i-n diodes; waveguide attenuators; I-region thickness; I-region width modulation; PIN diode attenuator; attenuator design; dc bias current; forward resistance; microwave attenuators; reflective attenuators; Attenuation; Attenuators; Charge measurement; Diodes; Electrical resistance measurement; Microwave circuits; Radio frequency; Switches; Switching circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location
Orlando, FL, USA
ISSN
0149-645X
Print_ISBN
0-7803-2581-8
Type
conf
DOI
10.1109/MWSYM.1995.406091
Filename
406091
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