Title :
A study on InGaN/GaN multiple quantum-well hydrogen sensor with HfTiO as gate dielectric
Author :
Chen, Gang ; Choi, A.H.W. ; Lai, P.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
A hydrogen sensor based on InGaN/GaN multiple quantum wells (MQWs) was fabricated. A gate dielectric HfTiO was added to stabilize its performance at high temperature. Its hydrogen-sensing properties were studied at high temperatures from 100°C to 500°C. The sensor showed promising hydrogen-sensing properties over a wide temperature range, and could still function beyond 500°C.
Keywords :
III-V semiconductors; gallium compounds; gas sensors; hafnium compounds; high-k dielectric thin films; hydrogen; indium compounds; quantum well devices; semiconductor quantum wells; wide band gap semiconductors; H2; InGaN-GaN-HfTiO; MQWs; carrier-localization effect; gate dielectric; hydrogen sensor; hydrogen-sensing properties; multiple quantum wells; temperature 100 degC to 500 degC; Atomic layer deposition; Gallium nitride; High K dielectric materials; High-K gate dielectrics; Hydrogen; Indium; Jitter; Quantum well devices; Sputtering; Temperature sensors;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394172
