Title :
Surface recombination/generation velocity in metal-oxide-silicon field-effect transistors
Author :
Chen, Zuhui ; Zhou, Xing ; Zhu, Guojun ; Lin, Shihuan
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
Photo-device efficiency and performance are limited by the surface carrier recombination because the minority carriers are lost in the recombination process which also generates heat and increases device temperature. Based on Shockley-Read-Hall steady-state theory of recombination-generation-trapping kinetics, in the paper, the recombination DC current voltage (R-DCIV) method is extended to explore the surface minority carrier recombination/generation velocity along the surface channel region in metal-oxide-silicon (MOS) transistors. It shows that the surface recombination/generation velocity is not a system constant but can be modulated by the gate voltage in the photo-devices with an MOS structure.
Keywords :
MOSFET; minority carriers; surface recombination; R-DCIV method; Shockley-Read-Hall steady-state theory; metal-oxide-silicon field-effect transistors; minority carriers; photo-device efficiency; recombination DC current voltage method; recombination-generation-trapping kinetics; surface carrier recombination; DC generators; Electron traps; FETs; MOS devices; MOSFETs; Radiative recombination; Solar power generation; Steady-state; Temperature; Voltage; MOS transistors; recombination DCIV (R-DCIV); surface recombination/generation velocity;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394175