Title :
A novel E-SIMOX high voltage device structure with the charge islands on the SOI
Author :
Wu, Lijuan ; Hu, Shengdong ; Zhang, Bo ; Li, Zhaoji
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
Based on ENDIF (ENhanced DIelectric layer Field), a new E-SIMOX high voltage device structure with the charge islands on the SOI and its breakdown mechanism proposed in this paper. The structure is characterized by the charge islands inserted on the top interface of silicon layer and dielectric layer. Inversion holes located by Coulomb´s force enhance the electric field of the dielectric layer (EI) and so increase the vertical breakdown voltage (BV). EI = 917V/¿m and VB,V = 345V is obtained by 2D simulation on a 0.375-¿m-thick dielectric layer and 2-¿m-thick top silicon layer. Voltage shared by dielectric layer is more than 95% of BV.
Keywords :
SIMOX; inversion layers; island structure; Coulomb force; E-SIMOX high voltage device structure; SOI; charge islands; dielectric layer; enhanced dielectric layer field; inversion holes; silicon layer; size 0.375 mum; size 2 mum; voltage 345 V; Breakdown voltage; CMOS technology; Dielectric breakdown; Dielectric devices; Dielectric substrates; Doping; Permittivity; Silicon on insulator technology; Tellurium; Wafer bonding;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394181
