DocumentCode
3223976
Title
Self-aligned nanowires in tetrahedral amorphous carbon multilayer structures
Author
Krauser, J. ; Gehrke, H.-G. ; Hofsäss, H. ; Trautmann, C. ; Weidinger, A.
Author_Institution
Hochschule Harz, Univ. of Appl. Sci., Wernigerode, Germany
fYear
2011
fDate
15-18 Aug. 2011
Firstpage
1335
Lastpage
1338
Abstract
In this work we combine ion track techniques to construct self-aligned vertical structures with nanometer dimensions. The main idea is to use multilayer targets and apply various etching techniques to create openings along the ion path. By irradiating such a multilayered sample including a tetrahedral amorphous carbon (ta-C) layer and a polymer film on top of the stack with swift heavy ions, the track in the polymer and the electrically conducting track in the ta-C layer are self-aligned and need no extra adjustment. Additional layers, e.g., metals or insulators which are little or not affected by the passage of the ions, can be inserted between the polymer resist and the ta-C film. Two appropriate device applications are proposed: a nano-sized field emission cathode and a two terminal quantum dot structure which might be completed to a transistor by adding a gate terminal.
Keywords
carbon; cathodes; electron field emission; etching; multilayers; nanowires; polymer films; quantum dots; resists; C; electrically conducting track; etching; ion track; nanosized field emission cathode; polymer film; polymer resist; quantum dot structure; self-aligned nanowires; self-aligned vertical structures; swift heavy ions; ta-C film; tetrahedral amorphous carbon multilayer structures; Carbon; Conductivity; Degradation; Films; Insulation life; Ions; Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location
Portland, OR
ISSN
1944-9399
Print_ISBN
978-1-4577-1514-3
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2011.6144293
Filename
6144293
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