A 60 GHz MMIC stabilized frequency source composed of a 30 GHz DRO and a doubler

Author

Funabashi, Masaki ; Inoue, Takeru ; Ohata, Katsuki ; Maruhashi, Kenichi ; Hosoya, Ken´ichi ; Kuzuhara, Masaaki ; Kanekawa, K. ; Kobayashi, Yoshiyuki

Author_Institution

Adv. Millimeter Wave Technols. Co. Ltd., NEC Corp., Shiga, Japan

fYear

1995

fDate

16-20 May 1995

Firstpage

71

Abstract

This paper presents a 60 GHz highly stabilized frequency source, which is composed of a 30 GHz DRO and a doubler based on 0.15 /spl mu/m gate AlGaAs/InGaAs HJFET MMIC technologies. The 30 GHz DRO exhibited low phase noise of -102 dBc/Hz at 100 kHz off-carrier with the maximum output power of 7.7 dBm. The 30-to-60 GHz doubler showed high conversion gain of -1.5 dB at the input power of 7 dBm. For the 60 GHz frequency source, markedly low phase noise of -93 dBc/Hz at 100 kHz off-carrier and better than 1.9 ppm/C frequency stability has been achieved.<>

Keywords

III-V semiconductors; MMIC oscillators; aluminium compounds; dielectric resonator oscillators; field effect MMIC; frequency multipliers; frequency stability; gallium arsenide; indium compounds; millimetre wave oscillators; phase noise; -1.5 dB; 0.15 micron; 60 GHz; AlGaAs-InGaAs; DRO; HJFET MMIC technology; MMIC stabilized frequency source; conversion gain; frequency doubler; frequency stability; input power; maximum output power; phase noise; Circuits; Dielectrics; Frequency; MMICs; Millimeter wave communication; Millimeter wave technology; National electric code; Oscillators; Phase noise; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406095

Filename

406095