Title :
Modeling SOI-MOSFET using neuro space mapping
Author :
Armaki, Mahdi Gordi ; Hosseini, Seyed Ebrahim ; Haddadnia, Javad
Author_Institution :
Dept. of Eng., Tarbiat Moallem Univ. of Sabzevar, Sabzevar, Iran
Abstract :
The drift-diffusion (DD) model is not accurate for simulation of sub-micrometer semiconductor devices. Using RBF NN, a neuro space mapping is proposed to DD model parameters. The DD model with mapped parameters can produce accurate simulation results of the hydrodynamic model. Simulations of a SOI-MOSFET confirm the ability of the proposed method for submicron device simulation.
Keywords :
MOSFET; electronic engineering computing; radial basis function networks; silicon-on-insulator; RBF neural nets; SOI-MOSFET; drift-diffusion model; neuro space mapping; submicron device simulation; Circuit simulation; Electron devices; High definition video; Hydrodynamics; Java; Microwave circuits; Neural networks; Poisson equations; Semiconductor devices; Temperature;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394186
