A physical model based on surface potential for double-gate a-Si:H TFTs

Author

Liu, Yuan ; Yao, Ruo-He ; Bin Li ; Xie, Wen-Niu

Author_Institution

Fac. of Mater. & Energy, Guangdong Univ. of Technol., Guangzhou, China

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

75

Lastpage

78

Abstract

In this paper, a physical model based on surface potential is presented for double gate a-Si:H TFTs. Firstly, a new model for the distribution of potential and electrical field along the bulk a-Si:H layer is proposed when both the front and back gates are biased in the positive voltages. Using this model, the front and back surface potential can be calculated from the equation groups by the iterative method. Secondly, a charge sheet model is developed and then verified using the experimental data.

Keywords

elemental semiconductors; hydrogen; iterative methods; semiconductor device models; silicon; thin film transistors; Si:H; back gates; charge sheet model; double-gate TFT; electrical field distribution; front gates; iterative method; physical model; surface potential; Active matrix liquid crystal displays; Amorphous silicon; Electric potential; Electrostatics; Equations; Iterative methods; Tail; Temperature; Thin film transistors; Voltage; a-Si:H TFT; double gate; surface potential;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394187

Filename

5394187