Title :
A physical model based on surface potential for double-gate a-Si:H TFTs
Author :
Liu, Yuan ; Yao, Ruo-He ; Bin Li ; Xie, Wen-Niu
Author_Institution :
Fac. of Mater. & Energy, Guangdong Univ. of Technol., Guangzhou, China
Abstract :
In this paper, a physical model based on surface potential is presented for double gate a-Si:H TFTs. Firstly, a new model for the distribution of potential and electrical field along the bulk a-Si:H layer is proposed when both the front and back gates are biased in the positive voltages. Using this model, the front and back surface potential can be calculated from the equation groups by the iterative method. Secondly, a charge sheet model is developed and then verified using the experimental data.
Keywords :
elemental semiconductors; hydrogen; iterative methods; semiconductor device models; silicon; thin film transistors; Si:H; back gates; charge sheet model; double-gate TFT; electrical field distribution; front gates; iterative method; physical model; surface potential; Active matrix liquid crystal displays; Amorphous silicon; Electric potential; Electrostatics; Equations; Iterative methods; Tail; Temperature; Thin film transistors; Voltage; a-Si:H TFT; double gate; surface potential;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394187
