A low noise broadband GaAs MESFET monolithic distributed preamplifier

Author

Freundorfer, Alois P. ; Lionais, P.

Author_Institution

Dept. of Electr. & Comput. Eng., Queen´s Univ., Kingston, Ont., Canada

fYear

1995

fDate

16-20 May 1995

Firstpage

57

Abstract

It is shown that the equivalent input noise current density of a distributed preamplifier of an optical receiver can be improved by using large gate line matching impedance. A monolithic GaAs MESFET distributed preamplifier utilizing this design consideration was fabricated. Using a 35 /spl mu/m InGaAs p-i-n photodiode, it was shown to have an equivalent input noise current density of 8 pA//spl radic/(Hz) and an 8 GHz bandwidth. To date, this is the best known result for a 0.8 /spl mu/m GaAs MESFET process.<>

Keywords

III-V semiconductors; MESFET integrated circuits; distributed amplifiers; gallium arsenide; integrated optoelectronics; optical receivers; p-i-n photodiodes; preamplifiers; wideband amplifiers; 0.8 micron; 35 micron; 8 GHz; GaAs; InGaAs; MESFET monolithic distributed preamplifier; equivalent input noise current density; gate line matching impedance; low noise broadband amplifier; optical receivers; p-i-n photodiode; Bandwidth; Current density; Gallium arsenide; Impedance; Indium gallium arsenide; MESFETs; Optical noise; Optical receivers; PIN photodiodes; Preamplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406098

Filename

406098