Title :
The effects of random distribution fluctuations of dopants on SOI-MOSFET performance
Author :
Bonab, Jafar Ahadzadeh Farhood ; Abtahi, Seyed Ehsan ; Hosseini, Seyed Ebrahim
Author_Institution :
Eng. & Tech. Fac., Sabzevar Univ. of Tarbiat Moallem, Sabzevar, Iran
Abstract :
In this paper the effects of random distribution fluctuations of dopants in the channel of a nano-scale SOI-MOSFET are investigated via simulations. Simulations are performed using energy balance model. According to obtained results, the threshold voltage is subjected to variations due to non-uniform distribution of dopants under the gate.
Keywords :
MOSFET; silicon-on-insulator; dopant nonuniform distribution; energy balance model; nanoscale SOI-MOSFET; random distribution fluctuation effect; silicon-on-insulator; threshold voltage; FinFETs; Fluctuations; Frequency; Impurities; Leakage current; MOSFET circuits; Semiconductor device modeling; Semiconductor process modeling; Silicon; Threshold voltage; Channel; SOI-MOSFET Transistor; Threshold Voltage; dopant;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394189
