Title :
Analytical model with empirical verification for heterojunction bipolar transistors under illumination
Author :
De Barros, L.E.M. ; Paolella, A. ; Herczfeld, Peter R. ; Enquist, Paul
Author_Institution :
Center for Microwave-Lightwave Eng., Drexel Univ., Philadelphia, PA, USA
Abstract :
A new model for the HBT has been developed which solves for the electrical and photogenerated currents in base, emitter and collector. The model accounts for the discontinuity in quasi-fermi level by defining an effective carrier interface velocity. Experimental and theoretical curves relating to the device behavior are presented and compared.<>
Keywords :
heterojunction bipolar transistors; microwave bipolar transistors; photodetectors; phototransistors; semiconductor device models; HBT; analytical model; device behavior; discontinuity; effective carrier interface velocity; empirical verification; heterojunction bipolar transistors; photogenerated currents; quasi-fermi level; Analytical models; Equations; Frequency response; Heterojunction bipolar transistors; Lighting; Microwave devices; Optical devices; Optical receivers; Photoconductivity; Stimulated emission;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406100
