Title :
RF front-end ICs for digital radio broadcasting DRM and DAB
Author :
Wang, K.P. ; Wang, K.P. ; Lei, X.M. ; Zhou, J.Z. ; Cao, X. ; Zhang, W.R.
Author_Institution :
Inst. of RF-& OE-ICs, Southeast Univ., Nanjing, China
Abstract :
A CMOS RF receiver for digital radio broadcasting DRM and DAB applications is presented that contains an RF front-end, an analog baseband, a frequency synthesizer, and a controlling logic unit. In the RF front-end, the noise figure (NF) is minimized by a noise-canceling technology, and the IP3 is improved by using differential multiple gate transistors (DMGTR). The analog baseband consists of an image-rejection mixer, a 5th-order OTA-C bandpass filter (BPF), two IF VGAs, and a received signal strength indicator (RSSI). The frequency synthesizer is an integer-N PLL based on multi-modulus dividers (MMD), which achieves a wide frequency covering. The circuit is fabricated in a 0.18-¿m CMOS technology. The DSB-NF of the RF front-end is 3.1~6.1 dB while the IIP3 is -4.7~0.2 dB, and the gain dynamic range is >85 dB. The image-rejection radio (IRR) of the image-rejection mixer is >40 dB for DAB and >45 dB for DRM. The LO phase noise is -69.81 dBc/Hz@10 kHz and -108.30 dBc/Hz@1MHz. The chip area is 2.66 mm à 2.22 mm, while drawing a current of 52 mA from a 1.8 V voltage supply.
Keywords :
CMOS integrated circuits; digital audio broadcasting; frequency dividers; frequency synthesizers; radio receivers; radiofrequency integrated circuits; CMOS RF receiver; DMGTR; OTA-C bandpass filter; RF front-end IC; controlling logic unit; current 52 mA; differential multiple gate transistors; digital audio broadcasting; digital radio broadcasting DAB; digital radio broadcasting DRM; digital radio mondiale; frequency synthesizer; gain -4.7 dB to 0.2 dB; gain 3.1 dB to 6.1 dB; image-rejection mixer; multimodulus dividers; received signal strength indicator; voltage 1.8 V; Band pass filters; Baseband; CMOS technology; Digital communication; Frequency synthesizers; Noise figure; Radio broadcasting; Radio control; Radio frequency; Receivers;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394195