DocumentCode
322434
Title
Effects of doping Pd/Pt in CoSb3 crystals on electrical and thermoelectric properties
Author
Tashiro, H. ; Notohara, Y. ; Sakakibara, T. ; Anno, H. ; Matsubara, K
Author_Institution
Toyo Kohan Co. Ltd., Kudamatsu, Japan
fYear
1997
fDate
26-29 Aug 1997
Firstpage
326
Lastpage
329
Abstract
Double doping of palladium and platinum is Skutterudite CoSb3 has been studied to improve thermoelectric properties. It was found that the solubility limit of Pd and Pt in CoSb3 crystal amounted to about 10 at% and substitution of Pd and Pt for Co occurred. The carrier concentration increased to about 5×1020 cm -3 due to a higher degree of solutioning of Pd and Pt by double doping than that of Pd or Pt by single doping. Electrical conductivity of σ=1950 S/cm at room temperature could be obtained for the double doping of 5 at% Pd and 5 at% Pt. Heavy doping by Pd and Pi was found to significantly reduce the lattice thermal conductivity, leading to the decrease in thermal conductivity from 0.1 (non-doped crystal) to 0.05 W/cm K. As a result, the figure of merit value Z was about 1.2×10-3/K at temperatures between 500 and 800 K, and the maximum ZT=0.9 was obtained at 750 K
Keywords
carrier density; cobalt compounds; electron-phonon interactions; palladium; platinum; semiconductor materials; thermal conductivity; thermoelectric power; 500 to 800 K; 750 K; CoSb3:Pd,Pt; carrier concentration; electrical conductivity; figure of merit; skutterudite; thermal conductivity; thermoelectric properties; Conducting materials; Conductivity measurement; Crystals; Doping; Electric variables measurement; Lattices; Optical scattering; Temperature distribution; Thermal conductivity; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 1997. Proceedings ICT '97. XVI International Conference on
Conference_Location
Dresden
ISSN
1094-2734
Print_ISBN
0-7803-4057-4
Type
conf
DOI
10.1109/ICT.1997.667145
Filename
667145
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