Analysis and design of class E power amplifier employing SiC MESFETs

Author

Xu, Zhichao ; Hongliang Lv ; Zhang, Yuming ; Zhang, Yimen

Author_Institution

Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

28

Lastpage

31

Abstract

Silicon carbide (SiC) metal-semiconductor field effect transistors (MESFET) is a perfect choice for designing class-E power amplifiers (PA) due to its high breakdown voltage and low output capacitance. In this paper, a transmission-line class-E PA employing SiC MESFET is designed, and transistor parameters are discussed. The proposed PA has been tested with advanced design system (ADS), the peak power added efficiency (PAE) of 70.5% with drain efficiency of 77.9% and power gain of 10 dB are achieved at operating frequency 2.14 GHz.

Keywords

Schottky gate field effect transistors; analogue circuits; network synthesis; power amplifiers; transmission lines; SiC; advanced design system; class E power amplifier; frequency 2.14 GHz; peak power added efficiency; silicon carbide metal-semiconductor field effect transistors; transistor parameters; transmission-line class-E PA; Capacitance; FETs; Gain; High power amplifiers; MESFETs; Power amplifiers; Silicon carbide; System testing; Transistors; Transmission lines; SiC MESFET; class-E power amplifier; transistor parameters; transmission-line;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394204

Filename

5394204