DocumentCode
3224390
Title
A hybrid CMOS-SET multiplier using frequency modulation
Author
Deng, Guoqing ; Chen, Chunhong
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Windsor, Windsor, ON, Canada
fYear
2011
fDate
15-18 Aug. 2011
Firstpage
1167
Lastpage
1170
Abstract
This paper proposes a hybrid CMOS-SET multiplier, which adopts frequency modulation technique in order to fully utilize SET´s unique Coulomb blockade oscillation characteristics. With advantages of the hybrid architecture, the multiplication result of two digital inputs is first modulated in frequency domain, and then converted into a digital output with the help of PLL and ADC components. As the circuit operation is performed with periodic oscillating signals instead of particular voltages or charges, the proposed multiplier exhibits the high immunity against background charge fluctuation and temperature variation. The structure can also be used to build a large multiplier in order to overcome the limitations of large gate capacitances required for SET devices.
Keywords
CMOS integrated circuits; Coulomb blockade; multiplying circuits; single electron devices; tunnelling; ADC component; Coulomb blockade oscillation; PLL component; SET device; frequency domain; frequency modulation; hybrid CMOS-SET multiplier; hybrid architecture; large gate capacitance; periodic oscillating signal; single-electron-tunneling; Capacitance; Frequency conversion; Frequency modulation; Logic gates; Oscillators; Phase locked loops; Voltage control; Coulomb blockade oscillation; Hybrid CMOS-SET; background charge; frequency modulation; multiplier;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location
Portland, OR
ISSN
1944-9399
Print_ISBN
978-1-4577-1514-3
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2011.6144313
Filename
6144313
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