Title :
The influence of interface states on the current gain of 4H-SiC bipolar transistors
Author :
Lu, Hongliang ; Zhang, Yimen ; Zhang, Yuming ; Sun, Ming ; Zhang, Qian
Author_Institution :
Key Lab. of Wide Band-Gap Semicond. Mater., Xidian Univ., Xi´´an, China
Abstract :
Based on the two dimensional device model, the effects of both the epi-interface states and SiC/SiO2 interface states on the current gain of 4H-SiC bipolar transistors are investigated. The recombination from epi-interface states in BE junction are the main reason for the lower current gain. Good agreements with reported experimental results are obtained.
Keywords :
bipolar transistors; silicon compounds; 4H bipolar transistors; BE junction; SiC-SiO2; epi-interface states; Bipolar transistors; Charge carrier processes; Interface states; Neodymium; Photonic band gap; Radiative recombination; Silicon carbide; Space charge; Spontaneous emission; Thermal conductivity; bipolar transistor; current gain; interface states; silicon carbide (SiC);
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394206
