• DocumentCode
    3224400
  • Title

    The influence of interface states on the current gain of 4H-SiC bipolar transistors

  • Author

    Lu, Hongliang ; Zhang, Yimen ; Zhang, Yuming ; Sun, Ming ; Zhang, Qian

  • Author_Institution
    Key Lab. of Wide Band-Gap Semicond. Mater., Xidian Univ., Xi´´an, China
  • fYear
    2009
  • fDate
    25-27 Dec. 2009
  • Firstpage
    495
  • Lastpage
    497
  • Abstract
    Based on the two dimensional device model, the effects of both the epi-interface states and SiC/SiO2 interface states on the current gain of 4H-SiC bipolar transistors are investigated. The recombination from epi-interface states in BE junction are the main reason for the lower current gain. Good agreements with reported experimental results are obtained.
  • Keywords
    bipolar transistors; silicon compounds; 4H bipolar transistors; BE junction; SiC-SiO2; epi-interface states; Bipolar transistors; Charge carrier processes; Interface states; Neodymium; Photonic band gap; Radiative recombination; Silicon carbide; Space charge; Spontaneous emission; Thermal conductivity; bipolar transistor; current gain; interface states; silicon carbide (SiC);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
  • Conference_Location
    Xi´an
  • Print_ISBN
    978-1-4244-4297-3
  • Electronic_ISBN
    978-1-4244-4298-0
  • Type

    conf

  • DOI
    10.1109/EDSSC.2009.5394206
  • Filename
    5394206
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3224400