Title :
The effect of the surface recombination on current gain for 4H-SiC BJT
Author :
Zhang, Yourun ; Zhang, Bo ; Li, Zhaoji ; Deng, Xiaochuan ; Liu, Xilin
Author_Institution :
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
Two-dimensional analysis of the surface recombination on current gain for 4H-SiC BJT (bipolar junction transistor) is studied. The experiment is well-matched with the simulation result, which is modeled by the continuous interface state distributions replacing the single interface state trap. The mechanism of current gain degradation is discussed.
Keywords :
bipolar transistors; silicon compounds; 4H BJT; SiC; bipolar junction transistor; continuous interface state distributions; surface recombination; Breakdown voltage; Degradation; Doping; Electron traps; Interface states; Photonic band gap; Silicon carbide; Spontaneous emission; Temperature; Thermal conductivity;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394209
