DocumentCode
3224447
Title
The effect of the surface recombination on current gain for 4H-SiC BJT
Author
Zhang, Yourun ; Zhang, Bo ; Li, Zhaoji ; Deng, Xiaochuan ; Liu, Xilin
Author_Institution
State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2009
fDate
25-27 Dec. 2009
Firstpage
491
Lastpage
494
Abstract
Two-dimensional analysis of the surface recombination on current gain for 4H-SiC BJT (bipolar junction transistor) is studied. The experiment is well-matched with the simulation result, which is modeled by the continuous interface state distributions replacing the single interface state trap. The mechanism of current gain degradation is discussed.
Keywords
bipolar transistors; silicon compounds; 4H BJT; SiC; bipolar junction transistor; continuous interface state distributions; surface recombination; Breakdown voltage; Degradation; Doping; Electron traps; Interface states; Photonic band gap; Silicon carbide; Spontaneous emission; Temperature; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location
Xi´an
Print_ISBN
978-1-4244-4297-3
Electronic_ISBN
978-1-4244-4298-0
Type
conf
DOI
10.1109/EDSSC.2009.5394209
Filename
5394209
Link To Document