Effect of material composition, device length and applied voltage on resonant tunneling in an asymmetrical double-barrier hetero-structure

Author

Jahangir, Ifat ; Jahangir, Shafat ; Khosru, Q.D.M.

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

477

Lastpage

480

Abstract

Transmission coefficient of electrons in an asymmetrical double-barrier hetero-structure has been calculated for different barrier widths, well widths, barrier-material compositions and applied voltages. These calculations are done using transmission line analogy of resonance tunneling phenomena and the results are used to show the effects of these variable parameters on transmission coefficient in terms of change in resonance energies.

Keywords

resonant tunnelling; transmission line theory; transmission lines; applied voltage; asymmetrical double-barrier hetero-structure; material composition; resonance energy; resonance tunneling; resonant tunneling; transmission coefficient; transmission line analogy; Composite materials; Effective mass; Electrons; Gallium arsenide; Potential energy; Resonance; Resonant tunneling devices; Transmission line matrix methods; Transmission lines; Voltage; Hetero-structure; asymmetrical double-barrier hetero-structure; resonant tunneling; transmission coefficient;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394212

Filename

5394212