Title :
Superior contact properties of trench filled contact for 3D MOSFET
Author :
Jung, Jae-Hyun ; Lee, Heon-Bok ; Ha, Jong-Bong ; Kang, Hee-Sung ; Lee, Jung-Hee ; Hahm, Sung-Ho
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea
Abstract :
In this paper, we examined the applicability of the trench filled contact technique for the self-aligned dual metal contact for 3D MOSFET through both experiments and simulation. The proposed contact technique has the lower parasitic resistance and capacitance compared with the conventional silicide and with the elevated source/drain structure. Using this technique, the ITRS requirement for the source/drain contact resistance can be satisfied.
Keywords :
MOSFET; contact resistance; 3D MOSFET; ITRS requirement; elevated source-drain structure; self-aligned dual metal contact; source-drain contact resistance; trench filled contact technique; Aluminum; Conductivity; Contact resistance; Dielectric substrates; Dry etching; MOSFET circuits; Parasitic capacitance; Silicides; Silicon; Wet etching; Contact Resistance; MOSFET; Source/Drain Junction;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394214
