Title :
Characteristics analysis of gate dielectrics in AlGaN/GaN MIS-HEMT
Author :
Bi, Zhiwei ; Hao, Yue ; Liu, Hongxia ; Liu, Linjie ; Feng, Qian
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´´an, China
Abstract :
Compared with the conventional high electron mobility transistor (HEMT), the metal-insulator-semiconductor (MIS)-HEMT has several advantages such as lower gate leakage current, higher maximum saturation drain current and the better restrain of current collapse. This paper studied the effects of temperature and the thickness of dielectric on the characteristics of Al2O3 MIS-HEMT. The device characteristics degrade with the increase of temperature. The thicker dielectric can decrease the gate leakage current. However, it can not provide larger transconductance because the permittivity of Al2O3 isn´t very high. Several promising alternatives of gate dielectrics (HfSiON, HfAlON, LT-GaN) are presented in this paper.
Keywords :
MIS devices; aluminium compounds; gallium compounds; hafnium compounds; high electron mobility transistors; silicon compounds; Al2O3; AlGaN-GaN; HfAlON; HfSiON; MIS-HEMT; gate dielectrics; high electron mobility transistor; metal-insulator-semiconductor; Aluminum gallium nitride; Degradation; Dielectrics; Gallium nitride; HEMTs; Leakage current; MODFETs; Metal-insulator structures; Temperature; Transconductance; Al2O3; AlGaN/GaN; High-k; MIS-HEMT;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394226
