Title :
Effect of high temperature AlN interlayer on the performance of AlGaN/GaN properties
Author :
Xue, JunShuai ; Hao, Yue ; Zhang, JinCheng ; Ni, Jinyu
Author_Institution :
Key Lab. of the Minist. of Educ. for Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China
Abstract :
A novel structure of AlGaN/GaN heterostructure which has a high temperature AlN interlayer (HT-AlN) in GaN buffer grown by metal organic chemical vapor deposition(MOCVD) on c-plane sapphire substrate has been researched. It is found that both electron mobility and sheet carrier concentration are increased by the HT-AlN interlayer compared to AlGaN/GaN heterostructure without HT-AlN interlayer. The sheet carrier concentration and Hall mobility measured by Hall increased from 1.446×1013 cm-2 and 1019 cm2/v·s to 1.605×1013cm-2 and 1036 cm2/v·s, respectively, hence the sheet resistance decreased from 424¿/¿ to 376¿/¿.
Keywords :
Hall mobility; MOCVD; aluminium compounds; carrier density; electron mobility; gallium compounds; high electron mobility transistors; substrates; AlGaN-GaN; HEMT; HT-A1N interlayer; MOCVD; c-plane sapphire substrate; electron mobility; heterostructure; high temperature interlayer; metal organic chemical vapor deposition; sheet carrier concentration; sheet resistance; Aluminum gallium nitride; Buffer layers; Capacitive sensors; Electron mobility; Gallium nitride; HEMTs; Hall effect; MODFETs; Organic chemicals; Temperature; AlGaN/GaN heterostructure; high temperature AlN interlayer(HT-AlN interlayer); metal organic chemical vapor deposition(MOCVD);
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394229
