DocumentCode
3224884
Title
Non-destructive detection of ion implant contamination: a SEMATECH/AMD study
Author
Wenner, Valerie ; Lowell, John ; Shi, Jilnghong ; Larson, Larry
Author_Institution
Adv. Micro Devices Inc., Austin, TX, USA
fYear
1995
fDate
13-15 Nov 1995
Firstpage
309
Lastpage
314
Abstract
In this paper we report on a systematic study of ion implantation equipment currently in operation or development by IC manufacturers and equipment vendors. The application of optical surface photovoltage (SPV) to both quantify and qualify bulk implant-induced contaminants in CZ P-type silicon is emphasized. We address the issue of contaminants and exemplify the use of SPV as a passive, in-line technique for assessment of the problem.
Keywords
elemental semiconductors; integrated circuit manufacture; ion implantation; nondestructive testing; production testing; silicon; IC manufacturers; SEMATECH/AMD study; Si; bulk implant-induced contaminants; in-line technique; ion implant contamination; ion implantation equipment; nondestructive detection; optical surface photovoltage; Annealing; Implants; Ion implantation; Iron; Optical sensors; Particle beam optics; Pulp manufacturing; Semiconductor device manufacture; Silicon; Surface contamination;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1995. ASMC 95 Proceedings. IEEE/SEMI 1995
ISSN
1078-8743
Print_ISBN
0-7803-2713-6
Type
conf
DOI
10.1109/ASMC.1995.484394
Filename
484394
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