Collector junction depletion-layer transit time model of SiGe HBT with space SiGe layer

Author

Hu, Huiyong ; Chen, Rui ; Zhang, Heming ; Song, Jianjun

Author_Institution

Sch. of Microelectron., Xidian Univ., Xi´´an, China

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

368

Lastpage

371

Abstract

Based on the physical and electrical characteristic of SiGe HBT with intrinsic SiGe layer, the model of voltage and electric field distribution, collector junction depletion layer width and depletion layer delay time are build respectively. Applying MATLAB, the impact of base doping concentration, base doping external diffusion depth, collector junction reverse bias and collector region doping on SiGe HBT collector junction depletion layer delay time are analyzed.

Keywords

Ge-Si alloys; electric fields; electric potential; heterojunction bipolar transistors; semiconductor device models; semiconductor doping; HBT; Matlab; SiGe; base doping concentration; collector junction depletion layer width; collector region doping; depletion layer delay time; doping external diffusion depth; electric field distribution; transit time model; voltage model; Delay effects; Doping; Electric variables; Germanium silicon alloys; Heterojunction bipolar transistors; MATLAB; Mathematical model; Semiconductor process modeling; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394240

Filename

5394240