Title :
Study on Hole Effective Mass of Strained Si1-xGex/(101)Si
Author :
Song, Jianjun ; Zhang, Heming ; Hu, Huiyong ; Xuan, RongXi ; Dai, Xianying
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´´an, China
Abstract :
Using K.P method with the help of perturbation theory, the arbitrary k wave vector directional hole effective masses in strained Si1-xGex/(101)Si were obtained. It is found that the more obvious anisotropy of the hole effective mass occurs in strained Si1-xGex on (101) Si substrate and that the [010] directional hole effective mass decreases obviously under strain, compared with the one in relaxed Si. The results above can supply valuable references to the design of the Si-based strained PMOS devices.
Keywords :
Ge-Si alloys; MOSFET; effective mass; k.p calculations; perturbation theory; PMOS devices; SiGe; arbitrary k wave vector; directional hole effective mass; k.p method; perturbation theory; Abstracts; Anisotropic magnetoresistance; Capacitive sensors; Dispersion; Effective mass; Fabrication; High speed integrated circuits; MOS devices; Occupational stress; Physics; PMOS; hole effective mass; strained Si1−xGex;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394242
