Title :
Fabrication of high compressive stress silicon nitride membrane in strained silicon technology
Author :
Bin Shu ; Zhang, Heming ; Xuan, Rongxi ; Dai, Xianying ; Hu, Huiyong ; Song, Jianjun ; Liang, Liang ; Cui, Jianan
Author_Institution :
Sch. of Microelectron., Xidian Univ., Xi´´an, China
Abstract :
The mechanism of compressive stress in silicon nitride membrane is studied in this paper. The effects of the various process parameters on the compressive stress in silicon nitride are analyzed and discussed on the basis of the current method using PECVD equipment. The high compressive stress silicon nitride membrane has been fabricated on the optimization of the process parameters, and the compressive stress is up to -1.08 GPa. Finally, the method of further improving the compressive stress in silicon nitride membrane is put forward.
Keywords :
compressive strength; elemental semiconductors; plasma CVD coatings; silicon compounds; PECVD equipment; SiN; compressive stress; silicon nitride; strained silicon technology; Atomic layer deposition; Biomembranes; Compressive stress; Fabrication; Frequency; Hydrogen; Nitrogen; Silicon; Tensile stress; Thermal stresses; compressive stress; silicon nitride; strained Si;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394243
