An analytical current model for lateral gradual doping channel in LDMOS

Author

Xie, Wenniu ; Bin Li

Author_Institution

Inst. of Microelectron., South China Univ. of Technol., Guangzhou, China

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

16

Lastpage

19

Abstract

An analytical surface potential based current model for lateral gradual doping channel in LDMOS (lateral gradual doping MOSFETs) is developed. The position dependent parameters and build in electric field induced by the gradual doping profile are taken into account in derivation of a surface potential equation. Proper approximations are made in integration of the drift-diffusion current. The model is verified by two-dimensional device simulator MEDICI.

Keywords

MOSFET; doping profiles; electric fields; semiconductor doping; 2D device simulator MEDICI; LDMOS; analytical surface potential based current model; drift-diffusion current; electric field; gradual doping profile; lateral gradual doping MOSFET; lateral gradual doping channel; metal-oxide-semiconductor field effect transistors; surface potential equation; Analytical models; Capacitance; Circuit simulation; Doping profiles; Equations; MOSFETs; Medical simulation; Semiconductor process modeling; Subthreshold current; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394244

Filename

5394244