Title :
An analytical current model for lateral gradual doping channel in LDMOS
Author :
Xie, Wenniu ; Bin Li
Author_Institution :
Inst. of Microelectron., South China Univ. of Technol., Guangzhou, China
Abstract :
An analytical surface potential based current model for lateral gradual doping channel in LDMOS (lateral gradual doping MOSFETs) is developed. The position dependent parameters and build in electric field induced by the gradual doping profile are taken into account in derivation of a surface potential equation. Proper approximations are made in integration of the drift-diffusion current. The model is verified by two-dimensional device simulator MEDICI.
Keywords :
MOSFET; doping profiles; electric fields; semiconductor doping; 2D device simulator MEDICI; LDMOS; analytical surface potential based current model; drift-diffusion current; electric field; gradual doping profile; lateral gradual doping MOSFET; lateral gradual doping channel; metal-oxide-semiconductor field effect transistors; surface potential equation; Analytical models; Capacitance; Circuit simulation; Doping profiles; Equations; MOSFETs; Medical simulation; Semiconductor process modeling; Subthreshold current; Transconductance;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394244
