Title :
The simulation study of Gaussian-doped base 4H-SiC bipolar junction transistor
Author :
Li, Jiaxuan ; Zhang, Yuming ; Zhang, Yimen ; Tang, Xiaoyan
Author_Institution :
Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China
Abstract :
A model of Gauss-doped base 4H-SiC bipolar junction transistor (BJT) is simulated by two dimensional device simulator ISE. The result shows Gaussian-doped base can effectively improve the current gain from 16.65 to 44.49, and decrease the output resisitance R0, Early voltage Va. Base with Gaussian-doped SiC BJT also enhance the small signal AC performance.
Keywords :
bipolar transistors; semiconductor device models; silicon compounds; wide band gap semiconductors; 3D device simulator; BJT; Gaussian-doped base 4H-SiC bipolar junction transistor; SiC; current gain; early voltage; output resisitance; small signal AC performance; Doping profiles; Etching; Gaussian processes; MOSFETs; Passivation; Power semiconductor switches; Semiconductor materials; Semiconductor process modeling; Silicon carbide; Transistors; Gauss Doping BJT Current Gain Frequency characteristics;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394253
