Structure design and characteristics analysis of 4H-SiC PiN switching diodes

Author

Zhang, Jiayang ; Zhang, M. Yuming ; Zhang, Yimen ; Tang, M. Xiaoyan

Author_Institution

Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

310

Lastpage

313

Abstract

A novel structure of 4H-SiC PiN switching diode with gradual changing doping concentration in n-base region is proposed in order to improve the switching characteristics. The device characteristics are simulated by ISE-TCAD. It is shown that there are about 30% increment in the softness parameters S and 10% shorter in reverse recovery time t_rr, compared with conventional SiC PiN switching diode with constant doping in n-base region. Simultaneously, as the conductivity modulation effect in the n-base region, the forward I-V characteristics are almost invariant.

Keywords

doping; p-i-n diodes; silicon compounds; 4H PiN switching diodes; ISE-TCAD; SiC; conductivity modulation effect; gradual changing doping concentration; Boron; Conductivity; Gallium arsenide; Power semiconductor switches; Schottky diodes; Semiconductor device doping; Semiconductor diodes; Semiconductor materials; Silicon carbide; Voltage; ISE; PiN; SiC; gradual changing doping; reverse recover;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394255

Filename

5394255