Title :
Mechanism of conversion and propagation of dislocations in 4H-SiC epilayer
Author :
Miao, Ruixia ; Zhang, Yuming ; Zhang, Yimen ; Tang, Xiaoyan ; Gai, Qingfeng
Author_Institution :
Key Lab. for Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China
Abstract :
The elastic energies of four kinds of dislocations per unit growth length have been calculated. We propose that threading screw dislocations(TSDs) along <0001> can propagate into epilayer but can not convert to TEDs. We suggest that both basal plane mix dislocations(BMDs) and threading screw dislocations (BTSDs) can convert to TEDs, and BMDs convert to TEDs much easier than BTSDs in epilayer because of the higher elastic energy. Based on the experimental results, the relationship between the dislocation density and the conversion and propagation of dislocations is discussed.
Keywords :
chemical vapour deposition; epitaxial growth; screw dislocations; semiconductor epitaxial layers; silicon compounds; wide band gap semiconductors; SiC; basal plane mix dislocations; chemical vapour deposition; dislocation density; dislocation propagation; elastic energy; semiconductor epitaxial layers; threading screw dislocations; Chemical vapor deposition; Epitaxial growth; Etching; Fasteners; Image converters; Scanning electron microscopy; Silicon carbide; Stacking; Substrates; Voltage; dislocations; mechanism of conversion and propagation;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394256
