Title :
The effect of surface charge on the breakdown behaviors of SiC SBD with planar terminations
Author :
Qing-wen, Song ; Yu-ming, Zhang ; Yi-men, Zhang ; Zhang-xu, Wang
Author_Institution :
Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China
Abstract :
A numerical model for 4H-SiC Schottky barrier diode (SBD) is proposed in this paper and the breakdown behaviors are achieved. The influences of the surface charge (Qs) on the breakdown characteristic of 4H-SiC SBD with different planar terminations, including junction termination extension (JTE) and field plate (FP) assisted JTE are calculated and investigated in detail.
Keywords :
Schottky barriers; Schottky diodes; silicon compounds; surface charging; wide band gap semiconductors; Schottky barrier diode; SiC; breakdown behaviors; field plate; junction termination extension; surface charge effect; Charge carrier processes; Doping; Electric breakdown; Electron mobility; Numerical models; Poisson equations; Samarium; Schottky diodes; Semiconductor materials; Silicon carbide; Schottky diode; SiC; breakdown Characteristic; planar termination; surface charge;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394258
