DocumentCode
3225406
Title
Accessibility of nano-crossbar arrays of resistive switching devices
Author
Chen, An
Author_Institution
Strategic Technol. Group, GLOBALFOUNDRIES, Sunnyvale, CA, USA
fYear
2011
fDate
15-18 Aug. 2011
Firstpage
1767
Lastpage
1771
Abstract
This paper discusses the accessibility of nano-crossbar arrays of resistive switching devices, using both analytical approaches and statistical simulations. Voltage configurations of the wordlines and bitlines in crossbar arrays play a critical role on sensing margin, disturbance, and power efficiency. Access resistance to the array affects the actual line voltage and degrades the sensing margin. Nonlinearity in switching device characteristics may improve accessibility of crossbar arrays.
Keywords
nanotechnology; statistical analysis; switches; nanocrossbar arrays; resistive switching devices; statistical simulations; voltage configurations; Equivalent circuits; Nanoscale devices; Resistance; Resistors; Sensors; Stress; Switches; crossbar array; nonlinearity; resistive switching devices; sensing margin;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location
Portland, OR
ISSN
1944-9399
Print_ISBN
978-1-4577-1514-3
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2011.6144367
Filename
6144367
Link To Document