Title :
The simulation study of 6H-SiC photoconductive semiconductor switch
Author :
Na, Ni ; Hui, M. Guo ; Zhang, M. Yuming ; Zhang, Yimen
Author_Institution :
Key Lab. of Wide Band-Gap Semicond. Mater. & Devices, Xidian Univ., Xi´´an, China
Abstract :
This paper has investigated vanadium compensated 6H-SiC PSCC horizontal structure through preliminary transient simulation of switching traps in different concentrations, optical pulse in different wavelengths, wave power and pulse width, and different bias voltage characteristics of the work with minimum off-state leakage current and minimum pulse rise time.
Keywords :
leakage currents; optical pulse generation; photoconducting switches; silicon compounds; vanadium; 6H-SiC photoconductive semiconductor switch; SiC; bias voltage characteristics; minimum pulse rise time; off-state leakage current; optical pulse; preliminary transient simulation; pulse width; switching traps; vanadium compensated 6H-SiC PSCC horizontal structure; wave power; Conductivity; Leakage current; Optical pulses; Optical switches; Photoconducting devices; Photoconducting materials; Power semiconductor switches; Semiconductor materials; Space vector pulse width modulation; Voltage; 6H-SiC; ISE; photoconductive semiconductor switches (PCSS); pulse power;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394260
