DocumentCode
3225609
Title
Advantages of low voltage applications and issues to be solved in SOI technology [DRAMs]
Author
Yoshimi, M. ; Terauchi, M. ; Nishiyama, A. ; Numano, M. ; Kubota, Hajime ; Watanabe, S. ; Tango, H.
Author_Institution
ULSI Res. Labs., Toshiba Corp., Kawasaki, Japan
fYear
1996
fDate
30 Sep-3 Oct 1996
Firstpage
4
Lastpage
5
Abstract
With low voltage applications as the main objective, SOI technology has made rapid and substantial progress in recent years. This paper describes the current status of SOI technology with emphasis on analysis of dynamic retention characteristics in low voltage DRAMs, countermeasures regarding the floating-body effect in low voltage region, and reliability issues in state-of-the-art SOI substrate technology
Keywords
DRAM chips; integrated circuit design; integrated circuit reliability; integrated circuit technology; silicon-on-insulator; DRAMs; SOI substrate technology; dynamic retention characteristics; floating-body effect; low voltage applications; reliability issues; Degradation; Germanium silicon alloys; Guidelines; Leakage current; Low voltage; Photonic band gap; Random access memory; Research and development; Silicon germanium; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location
Sanibel Island, FL
ISSN
1078-621X
Print_ISBN
0-7803-3315-2
Type
conf
DOI
10.1109/SOI.1996.552466
Filename
552466
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